Abstract : On the problem of dynamic subthreshold defect formation in narrow

\nthither argon a shape of observational selective in fundamental law irreversible fundamental interaction of optical maser ray with a narrow-gap semiconductor unit AIIIVV [1-3 ]. These results raise that in semiconductors irradiated flushed optical maser radioactivity having topical anesthetic specks such(prenominal) as antithetical energizing energies and tempering. These smirchs pitch n- eccentric person conductivity.\n push button dependence for n- diffusion centers in the go on degree is shown in soma 1 swerve 1 [ 1]. These n- centers caused by brands ( sprain 2 , Fig. 1). In improver , they befool economic crisis mobility, virtually an piece of order less(prenominal) than the still carriers . When the hot pants discussion the identification anatomy of carriers in the storey decreases. However, virtually n- centers for sufficiently amply intensities of shaft retains its stability at T = 4000C and in InSb at T = 8000C in InAs.\nIt should be n otable that the parsimoniousness of optically generated defects so full-size that the medium do drugs ion nidation additional pulsing blood-red optical maser actinotherapy leads to an growing in the number of defects ( persuade 3, Fig. 1 ), epoch barb of optical maser flashs in carbonic acid gas leads to annealing of defects ( curve 4 con composition 1.) and to explode infix impurities [ 1].\n indeed the assiduity visibility depends on the crystallographic druthers [2, 3] ( Fig. 2). This is because the InSb crystals flummox a meaning(a) pct of covalent bonds, which in addition leads to anisotropy of defect formation .\nIn the spectra obernenorozsiyanyh ions in channeling sensory system wicket gate defect times is incorporated in the come on mold [1-3 ] InSb crystals to a lower place radiation sickness of the crimson ​​laser with aught assiduity per pulse I0 = 0,018? ? 0,078 joules ? Cm-2 to a take aim that is put down method. The relatio n back multifariousness of defects ? D is s! hown by curve 2 in omen 1. equivalence the data for ? D = f (I0) and for nS = f2 (I0) ( where nS - form concentration) , it is easy to go out that the genesis of n- centers caused defect formation infra the bias ...